BSS138 n - channel mos e - c m o s c o r p . ( ww w . e c m o s . c o m . t w ) p a g e 1 o f 7 4 k11 n - rev.f00 2 package marking and ordering information absolute maximum ratings(t a =25 thermal characteristics general features v ds = 50v,i d = 0.22a r ds(on) < 6 @ v gs =4.5v r ds(on) < 3.5 @ v gs =10v esd rating 1000v hbm high power and current handing capability halogen free product is acquired surface mount package applications direct log ic - level interface: ttl/cmos drivers: relays, solenoids, lamps, hammers, display, memories, transistors, etc. battery operated systems solid - state relays device marking device device package reel size tape width quantity s138 BSS138 - hf sot - 23 ? 180mm 8 mm 3000 units parameter symbol limit unit drain - source voltage v ds 50 v gate - source voltage v gs 20 v drain current - continuous@ current - pulsed ( note 1) i d 0.22 a i d (7 0 ) 0.18 i dm 0.88 a maximum power dissipation p d 0.43 w operating junction and storage temperature range t j ,t stg - 55 to 175 parameter symbol limit unit th ermal resistance,junction - to - ambient (note 2) r ja 350 /w r ja 3 50 /w
BSS138 n - channel mos e - c m o s c o r p . ( ww w . e c m o s . c o m . t w ) p a g e 2 o f 7 4 k11 n - rev.f00 2 electrical characteristics (t a =25 notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300s, duty cycle 2%. 4. guaranteed by design, not subject to production testing. parameter symbol condition min typ max unit off characteristics drain - source breakdown voltage bv dss v gs =0v i d =250a 50 v zero gate volt age drain current i dss v ds =50v,v gs =0v 1 a gate - body leakage current i gss v gs =20v,v ds =0v 10 ua gate - source breakdown voltage bv gso v ds =0v, i g =250ua 20 v on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 0.8 1.5 v dr ain - source on - state resistance r ds(on) v gs =10v, i d =0.22a 3.5 v gs =4.5v, i d =0.22a 6 forward transconductance g fs v ds =10v,i d =0.22a 0.1 s dynamic characteristics (note4) input capacitance c lss v ds =25v,v gs =0v, f=1.0mhz 30 pf output capacitance c oss 15 reverse transfer capacitance c rss 6 switching characteristics (note 4) turn - on delay time t d(on) v dd =30v,v gs =10v, r gen =6 i d =0.22a 2.6 ns turn C on rise time t r 9 turn - off delay time t d(off) 20 turn C off fall time t f 6 to tal gate charge q g v ds =25v,i d =0.22a,v gs =10v 1.7 2.4 nc gate C source charge q gs 0.1 gate C drain charge q gd 0.4 drain - source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =0.44a 1.4 v
BSS138 n - channel mos e - c m o s c o r p . ( ww w . e c m o s . c o m . t w ) p a g e 3 o f 7 4 k11 n - rev.f00 2 typical electrical and thermal charac teristics
BSS138 n - channel mos e - c m o s c o r p . ( ww w . e c m o s . c o m . t w ) p a g e 4 o f 7 4 k11 n - rev.f00 2
BSS138 n - channel mos e - c m o s c o r p . ( ww w . e c m o s . c o m . t w ) p a g e 5 o f 7 4 k11 n - rev.f00 2
BSS138 n - channel mos e - c m o s c o r p . ( ww w . e c m o s . c o m . t w ) p a g e 6 o f 7 4 k11 n - rev.f00 2 notes 1. all dimensions are in millimeters. 2. tolerance 0.10mm (4 mil) unless otherwise specified 3. package body sizes exclude mold f lash and gate burrs. mold flash at the non - lead sides should be less than 5 mils. 4. dimension l is measured in gauge plane. 5. controlling dimension is millimeter, converted inch dimensions are not necessarily exact. package information sot 23 symbol dimensions in millimeters min. max. a 0.900 1.150 a1 0.000 0.100 a2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 d 2.800 3.000 e 1.200 1.400 e1 2.250 2.550 e 0.950typ e1 1.800 2.000 l 0.550ref l1 0.300 0.500 0 8
BSS138 n - channel mos e - c m o s c o r p . ( ww w . e c m o s . c o m . t w ) p a g e 7 o f 7 4 k11 n - rev.f00 2 sot 23 tape and reel informatio n notes 1. all dimensions are in millimeters. 2. 10 sprocket hole pitch cumulative tolerance 0.20max 3. general tolerance 0.25
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